中文摘要：

采用传统的电子陶瓷工艺制备了CaCu_3Ti_4O_（12）（以下简称CCTO）陶瓷,主要研究了1 100℃空气气氛下淬火对CCTO介电性能的影响。SEM和XRD研究表明,淬火并未改变CCTO陶瓷的晶粒尺寸大小,但会增加陶瓷表面CuO的析出。介电谱测试发现,经过淬火的CCTO陶瓷在低频下的介电常数和介电损耗均明显增大,而高频介电常数和介电损耗几乎不变。阻抗谱分析进一步表明,淬火后试样的晶界电阻显著降低,可能是晶界氧化相对不足,晶界界面态密度下降,导致耗尽层厚度减小,于是低频介电常数和介电损耗同时增大;由于氧化主要发生在晶界,晶粒点缺陷浓度几乎不受影响,因此晶粒尺寸和晶粒电阻几乎不随淬火而变化。

英文摘要：

The electronic ceramics CaCu3Ti4012 （hereinafter referred to as CCTO） is prepared by thetraditional electronic ceramic technique, and mainly studied the effect of quenched on dielectricproperties of CCTO ceramics under 1 100℃air atmosphere. It is found by SEM and XRD that thequenching process has little effect on grain size of CCTO ceramics, but surfacing precipitates of CuOwas improved. It is found by dielectric spectrum tests that the dielectric constant and dielectric loss ofCCTO ceramic quenched are increased at low frequency, while they are almost unaffected at highfrequency. Further analysis by impedance spectroscopy implies that grain boundary resistance of thesample decreased significantly after quenching, it may due to thickness decrease of grain boundarylayer for the absence of oxidation and interface density decrease, thus low frequency dielectric constantand dielectric loss improves at the same time. Because of oxidation occurs mainly in the grain boundaryand grain point defect density is almost unaffected, so the grain size and grain resistance are hardlychange with the quenching.