多量障碍结构作为堵住轻射出的二极管的层提高他们的表演的电子被采用。用联合模型,内部量效率,内部热来源特征,光谱特征,和光电的变换的非等温的 multi-physics-field,轻射出的二极管的效率系统地被分析。模拟结果显示出那:介绍显著地堵住层结构的多量障碍电子增加内部量效率和轻射出的二极管和光谱的紧张的光电的变换效率,并且强烈保证轻射出的二极管的热、轻的产量稳定性。这些结果被归因于堵住为减少的电子漏负责并且在活跃区域提高搬运人集中的层的电子的修改精力乐队图。
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their perfor- mance. Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source char- acteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically. The simulation results show that: introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier con- centration in the active region.