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Moir patterns and step edges on few-layer graphene grown on nickel films
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN16[电子电信—物理电子学] TD854.2[矿业工程—金属矿开采;矿业工程—矿山开采]
  • 作者机构：[1]State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China, [2]Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China, [3]Collaborative Innovation Center for Quantum Matter, Beijing 100871, China
  • 相关基金：Project supported by the National Basic Research Program of China （Grant No. 2012CB921300）, the National Natural Science Foundation of China （Grant Nos. 11074005 and 91021007）, and the Chinese Ministry of Education.
作者： 柯芬[1], 尹秀丽[1], 佟鼐[1], 林陈昉[1], 刘楠[2], 赵汝光[1], 付磊[2], 刘忠范[2], 胡宗海[1,3]
关键词： 生长, 台阶, 扫描隧道显微镜, 镍片, 图案, 云纹, 堆垛层错, 散射特性, scanning tunneling microscopy, few-layer graphene, stacking order, step edge
中文摘要：

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.

英文摘要：

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir6 patterns while both sublattices are seen in regions with moir6 pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406