采用射频溅射法在单晶Si衬底上制备了Fe88Zr7B5)100-xCux(x=0、1、2、3、4)非晶薄膜样品,对其软磁特性和巨磁阻抗(GMI)变化行为进行了测量和研究。测量结果显示,加入适量Cu元素(x=3)的制备态样品具有极好的软磁性能和GMI效应,此样品的矫顽力仅有56A/m,在13MHz的频率下,最大有效磁导率(μe)比和GMI比分别为42.5%和17.0%。研究发现,制备态样品的电阻R、电抗X和阻抗Z都随Cu含量的增加而下降。X=0、4两个样品的μe、R、X、Z对外加磁场响应极不敏感,只有软磁性能优异的x=3样品的μe、R、X、Z才显示出对外加磁场响应敏感,因而有显著的GMI效应。样品拥有高的磁导率、小的矫顽力和低的电阻率是获得大GMI效应的本质条件。
The soft magnetic properties and giant magnetoimpedance (GMI) effect of the amorphous films of (Fe88Zr7B5)100-xCux(x=0, 1,2,3 and 4) prepared by radio frequency sputtering on the substrate of single crystal Si were measured. The result show that the sample with a adequate Cu content (x=3) have excellent soft magnetic properties and GMI effect even though in the as-deposited state. For example, its coercive field is only about 56A/m and its maximum values of effective permeability (μe) and GMI ratios are 42.5% and 17.0% at the frequency of 13MHz, respectively. It is found that resistance (R), reactance (X), and impedance (Z) decrease with increasing Cu content for as-deposited samples. The measured values ofμe, R, X and Z are sensitive to external magnetic field for the x=3 sample, while they are almost unresponsive for the X=0 or 4 samples. Our results indicated that the essential requirements for a material to exhibit noticeable GMI effect are high permeability, small coercivity and low resistivity.