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Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2012.9.9
  • 页码：28-32
  • 相关项目：金属氧化物ReRAM的稳定性和可靠性研究
作者： 李红霞|Niu Ben|毛启楠|席俊华|柯伟青|季振国|
同期刊论文项目
金属氧化物ReRAM的稳定性和可靠性研究
期刊论文 21 会议论文 7 专利 9 著作 1
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