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测定DMMP的PMPS-QCM传感器的研究

期刊名称：传感技术学报，21(1),1-4, 2008.1
时间：0
分类：O484[理学—固体物理;理学—物理] TN386[电子电信—物理电子学]
作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, School of O_ptoelectronic Information University of Electronic Science and Technology of China, Chengdu 610054, China, [2]Department of Electronic Engineering, College of Communication and Electronics, Chongqing University, Chongqing 400044, China
相关基金：Project supported by the National Science Foundation for Post-Doctoral Scientists of China （Grant No. 20100471667）, the Natural Science Foundation of Chongqing Science and Technology Commission （CQ CSTC）（Grant No. 2011jjA40020）, the National Natural Science Foundation of China （Grant Nos. 60736005 and 61021061）, and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China （Grant No. GGRYJJ08-05）.
相关项目：传感技术及其系统

关键词： C60薄膜, 场效应晶体管, 双层电极, 钝化层, 高流动性, 超薄, 聚甲基丙烯酸甲酯, 电子迁移率, organic field-effect transistors, C60, Bphen, passivation layer

中文摘要：

C60field-effect transistor （OFET） with a mobility as high as 5.17 cm 2 /V·s is fabricated.In our experiment,an ultrathin pentacene passivation layer on poly-（methyl methacrylate）（PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared.The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode.By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques,it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity.Moreover,the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.

英文摘要：

C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate）（PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.