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One-step growth of Si3N4 stem–branch featured nanostructures: Morphology control by VS and VLS
  • ISSN号：0022-4596
  • 期刊名称：Journal of Solid State Chemistry
  • 时间：2011.7.7
  • 页码：2553-2558
  • 相关项目：稀土掺杂III族纳米氮化物稀磁半导体的制备与高压研究
作者： Qiushi Wang|Wei Gao|Lianchen Shan|Jian Zhang|Yunxia Jin|Ridong Cong|Qiliang Cui|
同期刊论文项目
稀土掺杂III族纳米氮化物稀磁半导体的制备与高压研究
期刊论文 16
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