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MgO-Based Double Barrier Magnetic Tunnel Junctions With Synthetic Antiferromagnetic Free Layer
  • ISSN号：0018-9464
  • 期刊名称：IEEE Transactions on Magnetics
  • 时间：2013.1.1
  • 页码：1-1
  • 相关项目：新型磁电阻功能材料及其纳米异质结构中的自旋转移力矩效应和应用
作者： Dalai Li, Jiafeng Feng, Guoqiang Yu, Hongxiang We|J. M. D. Coey|
同期刊论文项目
新型磁电阻功能材料及其纳米异质结构中的自旋转移力矩效应和应用
期刊论文 63
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