中文摘要：

少子寿命测试技术是监控单晶硅中杂质和缺陷的数量及性质的重要技术手段。基于常规光电导少子寿命测试的基本参数,研究了不同性质的受主型杂质缺陷对太阳电池用p型单晶硅中少子衰减过程的影响,并重点分析了仅存在受主型电子陷阱或复合中心时,少子衰减过程的变化规律;受主型电子陷阱和复合中心并存时,少子衰减过程的变化规律。研究表明：p型单晶硅中仅存在电子陷阱或复合中心时,二者的密度和俘获截面越小,少子寿命越长,且二者均存在一个最小阈值;当二者并存时,少子电子的衰减过程可根据少子寿命值的不同分成不同的衰减区域。

英文摘要：

The technology of minority carrier lifetime measurement is an important method to monitor the number and properties of impurities and defects in crystalline silicon materials. Based on the basic parameters of traditional transient photoconductive decay techniques,the influences of impurities and defects with different properties on the decay processes of the minority carrier in p type crystalline silicon materials used in manufacturing in solar cell industry were studied. The change rules of the decay process of minority carrier under the three conditions of only acceptor electron traps or recombination centers,acceptor electron traps and recombination centers coexist were mainly analyzed. The results show that the smaller of density and capture cross section,the longer of the minority carrier lifetime in p type crystalline silicon only with electrons traps or recombination centers,and both of them exist a minimum threshold value of the density or capture cross section. The decay process of the minority carrier can be divided into different decay regions according to the difference of the minority carrier lifetime value when the traps and recombination centers coexist.