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Amorphous SiO(x) nanowires catalyzed by metallic Ge for optoelectronic applications
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：0
  • 页码：3978-3984
  • 语言：英文
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Jiang, Zui-Min|Nie, Tian-Xiao|Fan, Yong-Liang|Zhang, Jiu-Zhan|Zou, Jin|Lin, Jian-Hui|Yang, Xin-Ju|Chen, Zhi-Gang|Wu, Yue-Qin|
同期刊论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
同项目期刊论文
temperature effects on the growth and electrical properties of Er2O3 films on Ge substrates
Hall resistivity of Fe doped Si film at low temperatures
Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
Transport properties of a Fe(0.04)Si(0.96) film at low temperatures
Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular b
Single crystalline Tm(2)O(3) films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epit
Group-IV-diluted magnetic semiconductor Fe(x)Si(1-x) thin films grown by molecular beam epitaxy
Hole transport in one-dimensional aligned GeSi quantum dots at low temperatures