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中文摘要：
采用甚高频等离子增强化学气相沉积（VHF-PECVD）的方法制备了硅烷浓度分别为6％和7％，随激发频率变化（40-70MHz）的氢化微晶硅（μc-Si：H）薄膜材料．研究了材料的电学特性、结构特性、沉积速率与激发频率之间的关系．结果发现材料的光敏性随频率的增加先降低后提高，晶化率和沉积速率的变化趋势与之相反；在晶化率最高点，材料在（220）的晶向衍射峰最高．并从光发射谱的角度研究了材料结构和沉积速率随频率变化的原因．
英文摘要：
Hydrogenated microcrystalline silicon （μc- Si：H） materials was prepared by plasma enhanced chemical vapor deposition （PECVD） at silane concentration 6% and 7% with changing excitation frequency （40--70MHz）. Relationship between excitation frequency and electrical, structural characteristics and deposition rate of the materials was studied. The results indicate that the crystalline volume fraction （ Xc ） decrease firstly and then increase with the increase of excitation frequency. But the photosensitivity and the deposition rate be have adversely with the change of excitation frequency. The reason of change of structure and deposition rate of thin films with excitation frequency was studied by optical emission spectroscopy.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
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