提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移.
Low energy helium ion implantation into InP heterostructures that induces controlled quantum well intermixing is reported and used for the first time. A significant blue-shift enhanced by a moderate RTA process is achieved. An intermixed FP laser is fabricated. Compared to the unimplanted laser,the lasing wavelength of the intermixed laser blue-shifts by 37nm.