通过熔融共混方法制备等规聚丙烯(iPP)/低结构度CB(VXC 68)与iPP/高结构度CB(BP 2000)复合材料,考察基体的结晶行为及结晶过程中复合材料体积电阻率的变化.结果表明,在等温结晶过程中复合材料体积电阻率迅速上升到一个最大值,然后在出现了短暂的下降趋势后趋于平稳,表明基体结晶行为对导电网络造成了影响,尤其是低结构度炭黑填充体系中这种影响更为明显;两种复合材料分别在不同温度下等温结晶时,随着等温结晶温度的升高,两种体系的体积电阻率极值均会增大,而且平台区的电阻值明显变大,这说明此时导电网络受到的破坏作用更大.
The effect of crystallization behavior on the evolution of conductive network during crystallization of iPP/CB composites prepared by melt processing was investigated in this study. The volume resistivity of the composite increased sharply to a maximum value, then decreased slowly and flattened out steady during isothermal crystallization of iPP matrix. It turned out the conductive network, especially in the low-structure carbon black filled system, was influenced significantly by the crystallization behavior of the matrix. When the two composites crystallized isothermally at different temperatures, with increasing the isothermal crystallization temperature, the volume resistivity of the two composite systems increased, and the resistance value increased significantly at the flat area, which meant the conductive network suffered a larger damage at higher isothermal crystallization temperature.