中文摘要：

采用0.15μm GaAs pHEMT工艺,研制了单级和两级两种结构的微波毫米波单片分布式放大器。在设计中采用电阻-电容结构代替传统分布式放大器中的终端电阻以降低直流功耗,在输入端加入短路线增强静电保护。根据应用需求设计了相应的放大器电路结构,实现了两种分布式放大器,比较了这两种结构在增益与功率容限方面的特点。第1种分布式放大器采用单级四管结构,在10~40GHz频段内,增益为（9.4±1.1）dB,1dB压缩点最大输出功率为21.5dBm;第2种分布式放大器采用两级双管级联结构,在15~40GHz频段内,增益为（12.2±1.4）dB,1dB压缩点最大输出功率为17dBm。

英文摘要：

Two millimeter wave monolithic distributed amplifiers are designed and implemented with 0.15μm GaAs pHEMT process.A RC network is used to replace the termination resistor in the traditional distributed amplifier structure to reduce DC power consumption,and a short stub at input port is used to improve ESD protection.In order to meet various requirements for gain and power,two different distributed amplifiers with the same number of transistor are designed.The distributed amplifier I achieves a gain of（9.4±1.1）dB and a maximum output 1dB compress point of 21.5dBm in the frequency range of 10~40GHz.The distributed amplifier II achieves a gain of（12.2±1.4）dB and a maximum output 1dB compress point of 17dBm in the frequency range of 15~40GHz.