中文摘要：

文章基于CSMC 0．8μm 700 V BCD工艺，采用检测驱动电流的方式，设计了1款非隔离4段式线性高压恒流发光二极管（1ight emitting diode，LED）驱动芯片，即将4个700 V双重扩散金属氧化物半导体（double-diffused metal oxide semiconductor，DMOS）功率开关管集成在芯片内部以实现分段点亮控制，在电压上升和下降阶段均能有效地完成对4段高压LED的分段驱动。仿真结果表明，在70～120 Ω范围内调：常片外限流电阻阻值可以实现驱动电流在29．5～44．5 mA范围内连续改变，以调节LED光照强度。

英文摘要：

Based on the CSMC 0. 8 μm 700 V BCD process, a non-isolated four-segment linear highvoltage constant current light emitting diode（LED） driver chip was designed by detecting the drivingcurrent. Four 700 V double-diffused metal oxide semiconductor（DMOS） power transistors were inte-grated in the chip to realize the subsection lighting control. It could effectively complete the subsec-tion control of the four-segment high voltage LED during either rise or fall of the voltage. Simulationresult shows that the chip ＇ s driving current can be adjusted continuously within 29.5-44. 5 mA bychanging the value of the current limiting resistor in the range of 70-120Ω, and then the illuminationintensity of the LED can be regulated.