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Synthesis and electrical characterization of tungsten oxide nanowires
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 分类：O484.1[理学—固体物理;理学—物理] TB383[一般工业技术—材料科学与工程]
  • 作者机构：Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No 50671053）.
作者： 黄睿, 朱静, 于荣
关键词： 纳米线, 氧化钨, 电气特性, 金属半导体, 透射电子显微镜, 合成, 化学气相沉积, 特性曲线, tungsten oxide nanowires, chemical vapour deposition （CVD）, electrical characterization, metal semiconductor metal （MSM） structure
中文摘要：

jzhu@mail.tsinghua.edu.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406