采用脉冲电磁场辅助水热合成方法制备了Al掺杂ZnO纳米结构薄膜,分析了脉冲电压对纳米结构薄膜形貌和结构的影响,利用SEM和XRD对样品进行了分析和表征,结果表明:当脉冲电压为500V时,ZnO具有纤锌矿结构,结晶良好,纳米结构组织致密,均匀;较未施加脉冲电磁场,ZnO的长径比提高了1.8倍。并进一步探讨脉冲电磁场对ZnO纳米结构的作用机理。
A1 doped ZnO nanostrueture films had been successfully prepared by hydrothermal methods assisted with pulsed electromagnetic field (PEMF). The effects of pulsed electromagnetic field voltage on growth and structure properties of ZnO nanostrueture films were studied in detail. The characterization of ZnO nanostructure films was measured by XRD and SEM. The XRD results show ZnO nanostrueture films have a highly crystallized wurtzite structure. SEM results expatiat ZnO films have a dense and even nanostructure, and the length to diameter radio is the biggest when the voltage of EPM is 500 V known about 1.8 times, as compared with ZnO film without EPM. At last, a possible mechanism by pulsed electromagnetic field acted on ZnO nanostrueture was approached.