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基于相变存储器的SD卡系统设计
  • ISSN号：1001-5868
  • 期刊名称：《半导体光电》
  • 时间：0
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050
  • 相关基金：中国科学院战略性先导科技专项项目（XDA09020402）; 国家“973”计划项目（2013CBA01900,2010CB934300,2011CBA00607,2011CB932804）; 国家集成电路重大专项项目（2009ZX02023-003）; 国家自然科学基金项目（61176122,61106001,61261160500,61376006）; 上海市科委项目（12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500）
作者： 王月青[1], 陈小刚[1], 蔡道林[1], 宋志棠[1], 李喜[1], 陈一峰[1]
关键词： 相变存储器, SD卡, 多接口SoC芯片, 坏块管理, 地址映射表, phase change random access memory, SD memory card, multi-interface SoC chip, bad block management, address mapping table
中文摘要：

基于中科院上海微系统研究所自主研发的相变存储器芯片,设计并实现了国内首个以相变存储器为存储介质的SD卡系统。本系统由多接口SoC芯片、6.375Mbits相变存储器芯片以及外围控制电路等构成。系统通过SD/MMC接口与上位机进行数据通信,并使用FAT文件系统进行管理。该SD卡系统容量为256kb,读取速度为2Mb/s,写入速度为0.5Mb/s。

英文摘要：

A secure digital memory card （SD） system was designed based on phase change random access memory chip manufactured by Chinese Academy of Sciences. The SD system is mainly composed of multi-interface SoC chip, 6. 375 Mbits phase change memory chip and peripheral circuit, etc. Data is transferred through SD/MMC interface between the memory system and PC, and managed by FAT file system. The capacity of this SD card system is 256 kb and the speed of reading and writing is 2 Mb/s and 0.5 Mb/s respectively.

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同项目期刊论文
Study on GeGaSbTe film for long data retention phase change memory application
Understanding the early cycling evolution behaviors for phase change memory application
Investigation of Sb-rich Sb-Te binary films used as phase change material
Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory
Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas
Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change mater
Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory applicati
RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming
Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application
Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Arinductively coupled plasmas
Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memor
Electron beam annealing for component optimization in Si-Sb-Te material
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Local structural characteristics of Sb2Te3 films studied by reverse Monte Carlo modeling
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
相变存储器失效时间分析
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
相变存储器及其发展
相变存储器失效时间分析
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
Ag掺杂对Ge2 Sb2 Te5结晶行为的影响
基于二极管单元的高密度掩模ROM设计
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器及其发展
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计
Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid
相变存储器失效时间分析
期刊信息
  • 《半导体光电》
  • 中国科技核心期刊
  • 主管单位:信息产业部
  • 主办单位:中国电子科技集团公司第四十四研究所（重庆光电技术研究所）
  • 主编：江永清
  • 地址：重庆市南岸区南坪花园路14号
  • 邮编：400060
  • 邮箱：soe@163.net
  • 电话：023-65860286
  • 国际标准刊号：ISSN：1001-5868
  • 国内统一刊号：ISSN：50-1092/TN
  • 邮发代号:
  • 获奖情况:
  • 重庆市首届十佳期刊称号，1999年,信息产业部1999-2000年度优秀电子期刊称号
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:5924