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氢化物气相外延生长的GaN厚膜中位错密度计算
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：O474[理学—半导体物理;理学—物理]
  • 作者机构：[1]南京大学物理系江苏省光电信息功能材料重点实验室, [2]南京信息工程大学数理学院
  • 相关基金：国家“973”重点基础研究项目(2006CB6049);国家“863”高技术研究发展计划(2006AA03A103,2006AA03A118,2006AA03Z411);国家自然科学基金(60721063,60676057,60731160628,60710085,60776001,60820106003);江苏省创新学者攀登项目(BK2008019);南京大学研究生科研创新基金资助
作者： 刘战辉[1,2], 修向前[1], 张荣[1], 谢自力[1], 颜怀跃[1], 施毅[1], 顾书林[1], 韩平[1], 郑有炓[1]
关键词： 位错, 氮化镓, 氢化物气相外延, X射线衍射
中文摘要：

采用两种不同的方法分别确定了在c面蓝宝石上用氢化物气相外延(HVPE)法生长的六方相的GaN厚膜中的位错密度。首先,利用选择性化学腐蚀方法研究了GaN膜中的晶体缺陷,研究区分了位错的不同类型,发现在HVPEGaN贯通位错占主导地位。由腐蚀后形成的腐蚀坑数量可以直接来确定膜中的位错密度。此外,研究了用特定的X射线衍射峰半峰宽数据计算得到位错密度的方法。结果表明,HVPE生长的六方相的GaN厚膜中的位错密度为109～1010cm-2,而且两种方法所得到的结果相符合。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:6070