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Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013.8
  • 页码：1008-1010
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： Chen, Sun|Cui, Xing-Mei|Ding, Shi-Jin|Sun, Qing-Qing|Nyberg, Tomas|Zhang, Shi-Li|Zhang, Wei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
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