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Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2011.7.7
  • 页码：202-204
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Zhao, Wei|Wang, Lai|Wang, Jiaxing|Hao, Zhibiao|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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