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AlN陶瓷基板材料热导率与烧结助剂的研究进展
  • 期刊名称:材料导报
  • 时间:0
  • 页码:56-62
  • 语言:中文
  • 分类:TQ174.758[化学工程—陶瓷工业;化学工程—硅酸盐工业] TN41[电子电信—微电子学与固体电子学]
  • 作者机构:[1]大连理工大学材料科学与工程学院,大连116024
  • 相关基金:国家自然科学基金(50871025);辽宁省自然科学基金(20051075)
  • 相关项目:含裂纹成分连续过渡梯度材料高温时间相关损伤破坏
中文摘要:

AlN陶瓷因具有高热导率、低介电常数、与硅相匹配的热膨胀系数等优异性能,被认为是替代Al2O3和BeO陶瓷的理想基板材料。主要讨论了AlN陶瓷的导热机理及影响热导率的因素;介绍了AlN陶瓷烧结助剂的选取原则、几种烧结助剂的作用机理及优缺点,并从高温烧结助剂体系和低温烧结助剂体系2个方面介绍了AlN陶瓷研究的最新进展。

英文摘要:

AlN ceramics attracts particular interest as a promising packaging substitute for Al2O3 and BeO due to its specific properties of high thermal conductivity, low dielectric constant and a matching thermal expansion with silicon. The heat conduction mechanisms of AlN and possible influencing factors of thermal conductivity are mainly discussed. In addition, the selection principle and mechanisms of sintering additives, as well as merits and demerits of these sintering additives are reviewed. Finally, sintering additives are divided into two systems, the high-temperature sintering additives and the low-temperature sintering additives to introduce the new progress of AlN ceramics.

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