采用MoO3作为阳极缓冲层,制备了结构为ITO/MoO3/P3HT/C60/Bphen/Ag的有机太阳能电池器件,研究了MoO3薄膜厚度对器件性能的影响。采用常用的等效电路模型,仿真计算得到MoO3缓冲层对器件串联电阻的影响。此外,测试了器件的吸收光谱,研究了MoO3缓冲层对器件光子吸收的作用。结果表明,在MoO3厚度为1 nm时,器件的短路电流密度、开路电压和填充因子都得到了提高。MoO3可以改善电极和有机层的界面接触性能,能够有效降低器件的串联电阻,提高载流子的传输和收集效率;同时,MoO3缓冲层透过率高,不会对器件的光吸收效率造成影响。
Using molybdenum trioxide(MoO3) as anode buffer layer,organic photovoltaic(OPV) cells with a structure of ITO/MoO3/P3HT/C(60)/Bphen/Ag was studied.The effect of thickness of MoO3 on electrical characteristics of the device was systematically investigated.From the conventional equivalent circuit model,the series resistance of cell was calculated.Also,the absorption spectrum was measured by a spectrophotometer.The results indicate that at the optimized thickness of MoO3,the short circuit current,open circuit voltage and fill factor were all increased.The MoO3 layer plays an important role in forming good interface contact between anode and donor,which decreases the series resistance and improves the carrier transfer and collection efficiencies.Moreover,MoO3 has high optical transparency and can not decrease the photon absorption efficiency.