中文摘要：

在这份报纸，我们基于在量烧改进很好的好障碍的洞(QW ) 表明了新奇物理机制半导体光放大器(SOA ) 到改进操作表演。完全描绘物理机制，由把 QW 乐队结构计算与 SOA 动态模型相结合的一个复杂理论模型被构造，在哪个搬运人运输， interband 效果和 intraband 效果都被考虑。模仿的结果出现了优化层能有效地提高的分开的监禁 heterostructure (SCH ) 的厚度燃烧的好障碍的洞，进一步在 SOA 提高非线性的效果并且减少搬运人恢复时间。在最佳的厚度， SCH 层能存储足够的搬运人数字，并且同时，存储搬运人能快并且有效地也被注入 QW。

英文摘要：

In this paper, we demonstrated a novel physical mechanism based on the well-barrier hole burning enhancement in a quantum well （QW） semiconductor optical amplifier （SOA） to improve the operation performance. To completely characterize the physical mechanism, a complicated theoretical model by combining QW band structure calculation with SOA＇s dynamic model was constructed, in which the carrier transport, interband effects and intraband effects were all taken into account. The simulated results showed optimizing the thickness of the separate confinement heterostructure （SCH） layer can effectively enhance the well-barrier hole burning, further enhance the nonlinear effects in SOA and reduce the carrier recovery time. At the optimal thickness, the SCH layer can store enough carrier numbers, and simultaneously the stored carriers can also be fast and effectively injected into the QWs.