中文摘要：

本文采用等离子体增强化学气相沉积技术（PECVD）在室温条件下制备了具有双电层效应的二氧化硅（SiO2）固体电解质薄膜,并以此SiO2薄膜作为栅介质制备了氧化铟锌（IZO）双电层薄膜晶体管.本文系统地研究了SiO2固体电解质中的质子特性对双电层薄膜晶体管性能的影响,研究结果表明,经过纯水浸泡的SiO2固体电解质薄膜可以诱导出较多的可迁移质子,因此表现出较大的双电层电容.由于SiO2固体电解质薄膜具有质子迁移特性,晶体管的转移特性曲线呈现出逆时针方向的洄滞现象,并且这一洄滞效应随着栅极电压扫描速率的增加而增大.进一步对薄膜晶体管的偏压稳定性进行测试,发现晶体管的阈值电压的变化遵循了拉升指数函数（stretched exponential function）关系.

英文摘要：

SiO2-based solid state electrolyte films are deposited at room temperature by using the plasma-enhanced chemical vapor deposition（PECVD） technique. An electric-double-layer（EDL） effect has been observed. Then, indium-zincoxide thin-film transistors（IZO TFTs） are fabricated by using such SiO2 films as dielectrics in a self-assembling process through a shadow mask. The IZO films for source/drain electrodes and channel are deposited on the nanogranular SiO2 film by RF sputtering the IZO target in an Ar ambient. Such TFTs exhibit a good performance at an ultralow operation voltage of 1.5 V, with a high field-effect mobility of 11.9 cm^2/Vs, a small subthreshold swing of 94.5 m V/decade, and a large current on-off ratio of 7.14 × 10^6. Effects of protons in the SiO2-based solid state electrolyte films on the electrical performances of the IZO TFTs are also studied. It is observed that a big EDL capacitance can be obtained for SiO2 films dipped in pure water, as a result of the fact that there are more protons in such SiO2 films. Because of the migration of protons in SiO2 electrolytes, an anti-clockwise hysteresis is observed on the transfer curve. Moreover, a bigger hysteresis is observed at a higher gate voltage scan rate. Gate bias stressing stabilities are also studied the shifts in threshold voltage are observed to obey a stretched exponential function.