Electronic band transformation from indirect gap to direct gap in Si-H compound
- ISSN号：1674-1056
- 期刊名称：《中国物理B：英文版》
- 时间：0
- 分类：O471.5[理学—半导体物理;理学—物理] TQ655[化学工程—精细化工]
- 作者机构：[1]Center for Low-Dimensional Materials, Micro-Nano Devices and System, Jiangsu Polytechnic University, Changzhou 213164, China, [2]Center for Micro/Nano Science and Technology, Jiangsu University, Zhenjiang 212013, China, [3]National Laboratory of Infrared Physics, Shanghai Institute for Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China, [4]Key Laboratory of New Energy Source, Changzhou 213164, China
- 相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 50775101）, the New Century Excellent Talents （Grant No. NCET-04-0515）, and the Jiangsu Provincial Science and Technology Supporting Project, China （Grant No. BE2008030）, Qing Lan Project （2008-04）, Jiangsu University Natural Science Foundation of China （Grant No. 07KJB430023）.
关键词：
电子能带结构, 化合物, 间接, 带隙, 差距, Si, 密度泛函理论, 周期模型, Si-H compounds, band structure, density functional theory, tight-binding calculation
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