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Electrostatic surface trap for cold polar molecules on a chipElectrostatic surface trap for cold polar molecules on a chipElectrostatic surface trap for cold polar molecules on a chip
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 时间:0
  • 分类:O[理学]
  • 作者机构:[1]State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 10674047, 10804031, 10904037, 10974055, 11034002, and 11274114), the National Basic Research Program of China (Grant Nos. 2006CB921604 and 2011 CB921602), the Basic Key Program of Shanghai Municipality of China (Grant No. 07JCI4017), and the Leading Academic Discipline Project of Shanghai Municipality of China (Grant No. 8408).
中文摘要:

We propose a simple scheme for trapping cold polar molecules in low-field seeking states on the surface of a chip by using a grounded metal plate and two finite-length charged wires that half embanked in an insulating suhstrate, calculate the electric field distributions generated by our charged-wire layout in free space and the corresponding Stark potentials for ND3 molecules, and analyze the dependence of the trapping center position on the geometric parameters. Moreover, the loading and trapping processes of cold ND3 molecules are studied by using the Monte Carlo method. Our study shows that the loading efficiency of the trap scheme can reach 11.5%, and the corresponding temperature of the trapped cold molecules is about 26.4 inK.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406