中文摘要：

用射频磁控溅射法在石英衬底上制备了ZnO：Eu^3＋薄膜，通过X射线衍射仪和荧光光谱仪对样品进行了表征，考察了氧氩比和退火工艺对其结构及发光性能的影响。结果表明：样品均呈现ZnO的六角纤锌矿结构，适当的氧氩比有利于ZnO的C轴择优取向的形成，高温退火会使晶粒尺寸增大；合适的氧氩比，尤其是退火工艺（700℃）可以促进ZnO基质（372nm）到Eu^3＋离子（^5Do-^7F2）之间的能量传递，但过多的氧及高温退火不利于稀土Eu^3＋离子465nm（^7Fo-^5D2）到611nm（^5Do-^7F2）的直接能量传递。

英文摘要：

ZnO： Eu^3＋ thin films were deposited on quartz substrates by rf magnetron sputtering. The obtained samples were characterized using X--ray diffraction （XRD） and spectrometer, respectively. Effects of O2/Ar ratio and heat treatment on the structure and photoluminescence （PL） were studied in detail. The results show that： All of the films have a hexagonal wurtzite structure of ZnO. Suitable 02/Ar ratio improves the （002） preferred orientation. The grain size increases after heat treatment. Suitable O2/Ar ratio, especially the heat treatment （700℃） can enhance the energy transfer from ZnO host （372nm） to doped Eua＋ （^5D0 --^7F2 ）, while the energy transfer from ^7Fo--^5De （465nm） to ^5Do--^7F2 （611nm） decreases with increasing O2/Ar ratio and annealing temperature.