中文摘要：

采用溶剂蒸发法,以丙酮为溶剂,在一定结晶条件下可获得晶体质量好的厘米级RDX大单晶（约40 mm×40 mm×30 mm）。用高分辨X射线三晶衍射（TAXRD）摇摆曲线（ω扫描）研究了RDX单晶的生长诱导位错,用Split PearsonⅦ分析函数并对摇摆曲线进行了拟合,得到（210）、（200）和（111）晶面的摇摆曲线半高宽（FWHM）,其值分别为35.35 arcsec,45.31 arcsec和77.92 arcsec,说明（111）晶面的位错密度最大,线生长速度最快;（210）晶面的位错密度最小,线生长速度最慢,RDX单晶呈现出各向异性。

英文摘要：

Bulk（about 40 mm×40 mm×30 mm） single crystal of cyclotrimethylene trinitramine（RDX） were prepared from acetone saturated solution by solvent evaporation techniques.Single crystal was cut by diamond wire cutter along some oriented crystal plane and variable thickness single crystal slices were obtained.The growth-induced dislocation in RDX single crystals was estimated by high-resolution X-ray Triple Axis diffraction（TAXRD） rocking curve（ω-scan）,and the full width at half maximum（FWHM） of（210）,（200） and（111） planes were 35.35,45.31 and 77.92 arcsec respectively.It can be concluded that the dislocation density in（111） plane is largest,while（210） crystal plane is least,and the growth of（111） crystal plane is fastest quickest,while（210） crystal plane is slowest.