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Linear strain-gradient effect on the energy bandgap in bent CdS nanowires
  • ISSN号：1998-0124
  • 期刊名称：Nano Research
  • 时间：0
  • 页码：308-314
  • 语言：中文
  • 分类：O343.1[理学—固体力学;理学—力学] TU452[建筑科学—岩土工程;建筑科学—土工工程]
  • 作者机构：[1]State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University Beijing 100871, China, [2]Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 相关基金：This study was supported by the National Natural Science Foundation of China （NSFC）, the State Key Research Projects for Fundamental Science （Nos. 2007CB936200, 2007CB936202, and 2009CB623703） of Ministry of Science and Technology of China （MOST）, and Natural Science Foundation （NSF） of Jiangsu Province of China.
  • 相关项目：低维功能材料结构力-电-磁耦合与器件原理的物理力学研究
作者： Kou, Liangzhi|Zhang, Zi Yue|Zhao, Qing|Xu, Jun|Han, Xiaobing|Wu, Peicai|Yu, Dapeng|Fu, Qiang|Gao, Jingyun|Zhu, Xinli|Guo, Wanlin|
关键词： 应变梯度, 弹性弯曲, 纳米线, 硫化镉, 线性, 能隙, 激子能量, 纳米电子学, Strain-gradient effect, CdS nanowire, bending deformation, cathodoluminescence
中文摘要：

尽管在半导体的可能的非同类的紧张效果被调查了因为在一半上世纪和紧张坡度能每在灵活 nanostructures 的测微计是超过 1% ，我们仍然缺乏他们对精力乐队的影响的理解。这里，我们进行紧张坡度的系统的阴极射线发光光谱学研究在在低温度的有弹性地弄弯的 CdS nanowires 的导致的激子精力移动，并且发现在弄弯的 nanowires 的激子精力红移动与紧张坡度成正比，格子失真的一个索引。密度功能的计算在弄弯的 nanostructures 显示出乐队差距减小的一样的趋势并且揭示内在的机制。半导体的乐队差距上的重要线性紧张坡度效果应该在在 nanoelectronics 调节光电子的性质的方法上打开新灯。

英文摘要：

Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear straingradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.

同期刊论文项目
　准一维半导体纳米材料的结构调控、物性测量及器件基础
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低维功能材料结构力-电-磁耦合与器件原理的物理力学研究
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期刊信息
  • 《纳米研究：英文版》
  • 主管单位:中华人民共和国教育部
  • 主办单位:清华大学 中国化学会
  • 主编：戴宏杰 李亚栋
  • 地址：北京市海淀区清华大学学研大厦A座5-7层
  • 邮编：100084
  • 邮箱：zhangjin@mail.tup.tsinghua.edu.cn
  • 电话：010-62783933
  • 国际标准刊号：ISSN：1998-0124
  • 国内统一刊号：ISSN：11-5974/O4
  • 邮发代号:
  • 获奖情况:
  • 第三届中国出版政府奖
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  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,英国科学文摘数据库
  • 被引量:60