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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminu
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2013.8.1
  • 页码：23-27
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Yao Yao|Wu Zhisheng|Liu Yang|Zhang Baijun|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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