中文摘要：

通过电化学诱导的溶胶-凝胶过程,以四甲氧基硅烷（TMOS）作为硅源,在氧化铟锡（ITO）电极表面制备了二氧化硅（SiO2）薄膜.使用扫描电镜（SEM）、紫外可见光谱（UV）和循环伏安法（CV）分别对薄膜的表面形貌、光吸收特性和导电性能进行了表征.结果表明：所施加的电压显著地影响SiO2薄膜的在固体表面上的生长.SEM图显示出在薄膜表面上没有明显的介孔结构.薄膜的紫外可见光谱在波长为430 nm处出现了SiO2分子的本征吸收峰,表明这固体表面上的材料主要是由SiO2构成的.循环伏安曲线证明该薄膜材料具有很高的电阻.这种电沉积的SiO2薄膜材料有望应用于分解有机污染物等领域.

英文摘要：

Silica thin films were electrodeposited on indium tin oxide electrode（ITO） by the way of electrochemical inducement with silica source of Tetramethoxysilane（TMOS）.The surface morphology of films was characterized by Scanning Electron Microscope（SEM）.The light absorption property and conductivity of films were characterized by Ultraviolet/Visible spectrum（UV） and Cyclic Voltammetry（CV）.We showed that the applied potential significantly affected the formation of silica films.The images of SEM showed that there are no porous surfaces on the surface of thin films.A UV absorption peak at 430 nm was observed.It was mainly due to the intrinsic absorption of silica films,all of which indicated the component of this thin films is silicon dioxide.Cyclic voltammograms（CV） showed high electric resistance of the films.This electrochemically induced approach of preparation of films has been expected to use for decomposing organic pollutants.