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Ionic doping effect in ZrO2 resistive switching memory
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：123502-123502
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Zhang, Haowei|Kang, Jinfeng|Yu, Bin|Gao, Bin|Sun, Bing|Chen, Guopeng|Zeng, Lang|Liu, Lifeng|Liu, Xiaoyan|Lu, Jing|Han, Ruqi|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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