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中文摘要：
在Si衬底GaN基垂直结构LED的N极性n型面上,利用电子束蒸发的方法制作了Ti/Al电极,通过了I-V曲线研究了有无AlN缓冲层对这种芯片欧姆接触的影响.结果显示,去除AlN缓冲层后的N极性n型面与Ti/Al电极在500到600℃范围内退火才能形成欧姆接触.而保留AlN缓冲层的N极性n型面与Ti/Al电极未退火时就表现为较好的欧姆接触,比接触电阻率为2×10-5Ω·cm2,即使退火温度升高至600℃,也始终保持着欧姆接触特性.因此,AlN缓冲层的存在是Si衬底GaN基垂直结构LED获得高热稳定性n型欧姆接触的关键.
英文摘要：
Ti /Al contacts have been deposited by electron beam Evaporation onto N-polar n-type surfaces of GaN-based vertical structure LED on Si substrate. The effect of AlN buffer layer on ohmic contact of these chips has been investigated through I-V characteristic. The results shown Ti /Al contacts prepared on N-polar n-type surface without AlN buffer layer became ohmic contact after annealing in the temperature range of 500—600℃ . The as-deposited Ti /Al contacts on N-polar n-type surface with AlN buffer layer shown ohmic behaviors with a specific contact resistivity of 2 × 10 -5 Ωcm2 and maintained ohmic contact characteristics until anneal at 600℃ . Therefore,The exsiting of AlN buffer layer is the key to forming highthermal stability ohmic contact for GaN-based vertical structure LED on Si substrate.
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