中文摘要：

基于精确的LED光源近场模型,提出了一种LED光学扩展量测量方法.通过追迹LED近场光源模型中的光线数据,可获得LED光功率关于光学扩展量的关系曲线,直观反映出LED光源的光学扩展量特性和光能利用率等信息.以紫外曝光系统中的UV-LED阵列面光源为例,对三款不同型号的UV-LED进行了实际测量.通过测量得到的光学扩展量和光能利用率曲线,可以对UV-LED的光束质量作出判断,并为阵列面光源的优化设计提供帮助.

英文摘要：

A method for measuring the etendue of LED was proposed based on the near-field model of the LED source.The curve of luminous power on etendue can be obtained by tracing rays data in LED near-field moled, which can directly reflect the etendue characteristics and the energy efficieny of LED source.Taking the UV-LED array surface source in the exposure system as an example, the actual measurement of the three different models of UV-LED were carried out.The designer can make a judgment on the UV-LED beam quality by the etendue and energy efficiency curve, which can provide help for the optimization design of the UV-LED array surface source.