利用脉冲激光沉积的方法在Si衬底上生长出了c轴高度取向的Mn掺杂ZnO薄膜。X射线衍射表明所有样品都具有纤锌矿结构,没有发现其它相,随着掺杂量的增加,c轴晶格常数增大。原子力显微镜结果显示:Mn的掺杂引起了ZnO薄膜表面粗糙度的变化。由光致发光谱发现,在387 nm附近出现了由于近带边自由激子复合引起的紫外峰,还有以430和545 nm为中心的较宽发光峰,结果表明:掺入到ZnO薄膜中的Mn以+2价的价态存在,掺Mn以后的ZnO薄膜带隙变大,缺陷能级也发生了改变,在发光谱中表现为紫外峰的蓝移,可见光部分430 nm和545 nm位置处发光峰的红移。
Zn1-xMnxO thin films were successfully grown on Si(111) substrates by pulsed laser deposition(PLD).X-ray diffraction measurement revealed that all the films were single phase and had wurtzite structure with c-axis orientation.As Mn concentration increased in Zn1-xMnxO films,the c-axis lattice constant increased gradually.Atomic Force Microscopy(AFM) showed that surface roughness and morphology changed with doping concentrations.Photoluminescence spectra of Zn1-xMnxO thin films were also studied which shows a narrow UV band at 387 nm,a broad blue band of 430 nm and another broad peak at 545 nm.It was deduced that Mn doping leads to a blue shift of the UV band,and a red shift of 430 nm and 545 nm.