采用电化学沉积方法,在孔径约50nm的阳极氧化铝模板中生长Cu纳米线,经过高温原位加热XRD实验,证实了其热膨胀系数约2.6×10^5^-1,稍大于块体Cu,与文献中Cu纳米线近似为零的热膨胀系数有明显的区别。对这一现象进行了简要的讨论后得出结论认为:基于模板生长的Cu纳米线,其晶格完整程度是决定热膨胀的重要因素。
Cu nanowires with diameter of about 50 nm were electrochemically deposited in anodic alumina membrane. An in-situ high-temperature XR.D technique was used to measure the crystalline structures. The results demonstrate that these Cu nanowires have a thermal expansion coefficient of about 2.6×10^5 K^-1, which is a little larger than the bulk's one. These polycrystalline Cu nanowires are completely different from the zero-expansion Cu nanowires reported in previous reference. It is concluded that the thermal expansion coefficient is dependent on the crystalline perfection in nanowires.