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Si doping at GaN inversion domain boundaries: an interfacial polar field for electron and hole separ
  • ISSN号：2050-7488
  • 期刊名称：Journal of Materials Chemistry A
  • 时间：2014.7.7
  • 页码：9744-9750
  • 相关项目：材料的界面物理与化学
作者： Wang, Ru-Zhi|Liu, Li-Min|Yan, Hui|Lau, Woon-Ming|
同期刊论文项目
材料的界面物理与化学
期刊论文 56
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