中文摘要：

由于半导体环形激光器器件尺寸不再受解理面的限制,结构简单紧凑,容易集成,近年来成为集成光源领域的研究热点之一。采用MOCVD系统外延生长InAlGaAs多量子阱激光器材料,利用BCl3,Cl2和Ar刻蚀气体的ICP干法刻蚀技术和PECVD介质钝化工艺,研制了基于环形谐振腔的双波长半导体激光器样品,实现了激光光源的单片集成。该激光器由两个半径分别为200和205μm的环形谐振腔和一条脊宽为3.4μm的直波导耦合构成,两者之间的耦合间距为1.0μm,当两个环形激光器的注入电流分别为50.12和50.22 mA时,对应的激射波长为1 543.12和1 545.64 nm。改变激光器的注入电流,可调节峰值波长与波长间隔。

英文摘要：

The semiconductor ring laser becomes one of the research focuses in the integrated light source field because its dimension is not limited to cleaved facets, its structure is simple, compact and easy to be integrated. With the InA1GaAs multi-quantum-well laser structure grown by the MOCVD system, a dual-wavelength semiconductor laser sample based on the ring resonator was realized using the ICP dry etching process with the BC13, C12 and Ar etching gases and PECVD passivation process, achieving the monolithically integrated laser source. The laser consists of two ring resonators with the radius of 200 9m and 205 μm, respectively, coupling with the bus waveguide, and the ridge width of which is 3.4 μm. The coupling gap between the ring resonators and the bus waveguide is 1.0μm. Under the injection currents for the two ring lasers of 50.12 mA and 50.22 mA, the two corresponding lasing wavelengths are 1 543.12 nm and 1 545.64 nm, respectively. The peak wavelength and wavelength interval can be adjusted by changing the injection current of the laser.