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Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applicat
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2011.3.3
  • 页码：-
  • 相关项目：基于新型二元相变材料的相变存储器原型器件研究
作者： Jiang, Hao|Guo, Kang|Xu, Hanni|Xia, Yidong|Jiang, Kun|Tang, Fei|Yin, Jiang|Liu, Zhiguo|
同期刊论文项目
基于新型二元相变材料的相变存储器原型器件研究
期刊论文 8 专利 1
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