基于密度泛函理论,从头计算了N以及N和Sb共掺BaSnO3的电子结构和光学性质.结果表明N单掺BaSnO3与N和Sb共掺BaSnO3均为p型透明导电材料,在可见光区透过率均在80%以上,且N和Sb共掺具有更高的电导率.计算结果为实验上制备p型钙钛矿结构透明导电材料提供了强有力的理论指导.
Based on density functional theory calculations,the electronic properties of N-doped BaSnO3 and N and Sb codoping are investigated.It is found that codoping with N acceptors and Nb donors in a ratio of 2:1 is suitable for the fabrication of low-resistivity p-type BaSnO3.Our results indicate that codoping with N acceptors and Nb donors is a prospective candidate as a p-type transparent conductive material.