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中文摘要：
Si基探测器与硅读出电路的单片集成不仅使光电芯片在性能上得到重要改善，还可极大地降低成本。在对量子阱、量子点原理描述的基础上，综述了它们应用于薄膜红外探测材料的研究进展，提出了近期工作的重点。
英文摘要：
Monolithically integrating photodetectors with Si CMOS circuitry would result an optoelectronic chip with significant increase in performance and reduction in cost. Here the Si photodetectors formed using both the quantum well and quantum dot structures are reported. Attention is also devoted to the physical principle of low dimension silicon as infrared detectors, as they are intended for applications on acquisition from stacks of detectors. The recent emphasis of research is proposed.
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