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Study on valence band and work function of n-type Hg3In2Te6 single crystal by photoelectron spectros
ISSN号:0042-207X
期刊名称:Vacuum
时间:2014.11
页码:187-190
相关项目:新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
作者:
Yapeng Li|Li Fu|Congyuan Liu|
同期刊论文项目
新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
期刊论文 27
会议论文 5
专利 1
同项目期刊论文
化学抛光对Au/Hg3In2Te6接触特性的影响
Effect of Ar+ ion etching treatment on the surface work function of Hg3In2Te6 wafer
Study of barrier height and trap centers of Au/n-Hg3In2Te6 Schottky contacts by current-voltage (I-V
Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by
The effect of fast annealing treatment on the interface structure and electrical properties of Au/Hg
Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3
Erratum:“Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectrosco
Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy
The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bri
The effect of chemical polishing on the interface structure and electrical property of Au/Cd0.9Zn0.1
On the morphology and crystallography of Hg5In2Te8 precipitation in Hg3In2Te6
Cu/Hg_3In_2Te_6欧姆接触形成机制的研究
ZnO过渡层对Au/Hg_3In_2Te_6肖特基接触特性的影响研究
HRTEM study on the ordered phases in Hg3In2Te6 crystals grown by Bridgman method
新型Hg3In2Te6芯片引线键合机制的研究
Effect of Passivation on the Electrical Properties ofAu/Hg3In2Te6 Schottky Contact
Effect of Nano Al Interlayer on the Schottky ContactProperty Between Metal and Hg3In2Te6 Wafer
不同温度下碲铟汞晶体结构的XRD研究
新型Hg3In2Te6芯片引线的键合机制
ZnO 过渡层对 Au / Hg3In2Te6肖特基接触特性的影响研究
Cu / Hg3In2Te6欧姆接触形成机制的研究
缺陷闪锌矿晶体Hg3In2Te6孪晶的EBSD和HRTEM观察