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中文摘要：
本文采用钼一铝一钼（Mo／A1／Mo）叠层结构作为源漏电极，制备氧化铟锌（IZO）薄膜晶体管（TFT）．研究了Mo／A1／Mo源漏电极中与IZO接触的Mo层溅射功率对TFT器件性能的影响．随着Mo层溅射功率的增加，器件开启电压（Von）负向移动，器件均匀性下降．通过X射线光电子能谱（XPS）深度剖析发现IZO／Mo界面有明显的扩散；当Mo层溅射功率减小时，扩散得到了抑制．制备的器件处于常关状态（开启电压为0．5V，增强模式），不仅迁移率高（～13cm^2·V^-1．S^-1），而且器件半导体特性均匀．
英文摘要：
Indium-zinc-oxide thin-film transistors （IZO-TFTs） are prepared with the multilayer structure of molybdenum- aluminum-molybdenum （Mo/A1/Mo） as the source/drain （S/D） electrode. Experiment demonstrates that the sputtering power of Mo （bottom layer of Mo/A1/Mo S/D） influences the performance of TFTs significantly. As the sputtering power increases, the Von runs negative shift, and the device uniformity degrades. XPS depth profile shows that the diffusion at the interface （IZO/Mo） occurs seriously. By decreasing the sputtering power, the diffusion can be suppressed and the devices are shown in normal off state （Von ,-0.5 V, enhanced mode）, with higher mobility （～13 cm2.v-l.s-1） and improved uniformity.
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