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Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices
  • ISSN号：0167-9317
  • 期刊名称：Microelectronic Engineering
  • 时间：2013.8.8
  • 页码：8-10
  • 相关项目：信息薄膜与LTCC集成器件
作者： Ma, Guokun|Tang, Xiaoli|Zhong, Zhiyong|Zhang, Huaiwu|Su, Hua|
同期刊论文项目
信息薄膜与LTCC集成器件
期刊论文 160 会议论文 5 专利 37
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