欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Making a field effect transistor on a single graphene nanoribbon by selective doping
ISSN号:0003-6951
期刊名称:Applied Physics Letters
时间:0
页码:25-29
语言:英文
相关项目:纳米管线中的杂质态及边界效应
作者:
Duan, Wenhui|Wu, Jian|Yan, Qimin|Zhou, Gang|Huang, Bing|Gu, Bing-Lin|Liu, Feng|
同期刊论文项目
纳米管线中的杂质态及边界效应
期刊论文 10
同项目期刊论文
Role of symmetry in the transport properties of graphene nanoribbons under bias
Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principles Study
Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to
Physical mechanism of transport blocking in metallic zigzag carbon nanotubes
Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge dopi
Structural and electronic properties of fluorinated double-walled boron nitride nanotubes: Effect of