中文摘要：

针对InGaAs／GaAsP／A1GaAs应变补偿量子阱非对称宽波导结构进行了实验研究。利用不同腔长，100μm发光区，500μm周期的管芯测量了外延片的内量子效率和内损耗，其分别为83．81％和0．6982cm-1；采用C—mount标准封装，腔长为1．5mm的单管测量了阈值电流和微分量子效率的特征温度，其分别为299和1278K；采用填充因子为74％，高纯度In焊料烧结，标准热沉封装制备了列阵激光器，比较了三种不同腔长的器件的P-I特性。最终确定腔长为1．5mm，当工作电流为230A时，二极管列阵激光器最大连续输出功率为204W，电光转换效率为52％。

英文摘要：

An experimental study was carried out about the asymmetrial wide waveguide structure of InGaAs/GaAsP/A1GaAs strain-compensated quantum well. Using the chips with different cavity lengths, 100 μm emitting area and 500 μm chip period, the internal quantum efficiency and internal loss of the epitaxial wafer were measured which is 83.81% and 0.698 2 cm-1, respectively. Also, the characteristic temperatures of threshold current and differential quantum efficiency were separately detected to be 299 and 1 278 K by the C-mount packaged single chip with 1.5 mm cavity length. The array leasers were prepared by high pure indium solder sintering with 74% fill factor and standard sink package. And the P-I （power-current） characteristics of diode arrays with different three cavity lengths were compared. When the cavity length was 1.5 mm and operating current was 230 A, the maximum CW output power of the diode arry laser was 204 W, and the electro-optical conversion efficiency was about 52% .