中文摘要：

在商用标准0．6μm体硅CMOS工艺下，设计了采用普通单栅及多栅版图结构的nMOS和pMOS晶体管作为测试样品，讨论其经过γ射线照射后的总剂量辐照特性，辐照中器件采用不同电压偏置，并在辐照前后对器件箩源漏极问泄漏电流、阈值电压漂移及跨导特性进行测量，研究表明nMOS总剂量效应对器件的版图结构非常敏感，而pMOS的总剂量效应几乎不受版图结构的影响。

英文摘要：

Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.