中文摘要：

通过X射线光电子能谱和低能电子衍射实验研究了10～180 eV的Ar＋、 He＋、S＋离子轰击n-InP（100）表面， 发现S＋离子轰击可以产生In-S组分，减轻离子轰击对表面的物理损伤.对于Ar＋离子轰击后的表面，经过S＋离子处理和加热过程以后，表面损伤得到了修复，最终得到了2×2的InP表面，进一步验证了S＋离子对InP表面的修复作用.

英文摘要：

The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.