中文摘要：

利用热蒸发法在硅衬底上合成了二氧化锡纳米梭阵列,并研究其场致电子发射特性。研究结果表明,所合成的二氧化锡纳米梭是一种新型的纳米结构,可以通过反应时间的不同得到不同密度的二氧化锡纳米梭阵列,从而实现可控生长。在研究场致电子发射方面,我们发现所合成的二氧化锡纳米梭阵列有优良的场发射性能,开启电场为1.4V/μm,对应的发射电流密度为10μA/cm^2;当电场强度为7.4V/μm时,发射电流密度高达2.48mA/cm^2。这是由于二氧化锡纳米梭结构有很小的尖端曲率半径以及所测量样品中二氧化锡纳米梭阵列分布比较均匀造成的。测量结果发现在F-N曲线上呈现两个线性段,我们认为这是由于在不同的电场下,发射电流由不同高度的梭形结构引起的,不同高度的梭形结构由于长径比不同因而具有不同的场增强因子,从而导致在F-N曲线上表现为两个线性段。

英文摘要：

Tin oxide nanoshuttle arrays were synthesized by thermal evaporation.The diameters of the nanoshuttle tips are as small as several nanometers.Field-emission measurements of the tin oxide nanoshuttle arrays showed that the turn-on field was 0.8 V/μm,which corresponds to the emission current density of 4 μA/cm^2,and the current density could reach to 2.48 mA/cm^2 under the field of 7.4 V/μm.These results show that as-formed tin oxide nanoshuttle arrays have a good field-emission property,which can be attributed to the high aspect ratio of the nanoshuttles.In addition,the F-N plot exhibits a nonlinear behavior with larger slope at a higher applied electric field,which can be attributed to the different heights of SnO2 nanoshuttle as emitters in low and high field respectively.